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FF400R33KF2C - Infineon

Description: IGBT Modules 3300V 400A DUAL

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FF400R33KF2C - Infineon  - 3D model
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FF400R33KF2C Details

  • Manufacturer Part Number:

    FF400R33KF2C

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    10

  • ECCN Code:

    3A228.C

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    660 A

  • Collector-Emitter Voltage-Max:

    3300 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X10

  • Number of Elements:

    2

  • Number of Terminals:

    10

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4800 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1900 ns

  • Turn-on Time-Nom (ton):

    480 ns

  • VCEsat-Max:

    4.25 V

FF400R33KF2C Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's current rating at high temperatures.
  • The maximum allowed voltage transient is 40V, but it's recommended to limit it to 30V to ensure reliable operation and prevent damage to the device.
  • Yes, the FF400R33KF2C is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD-protection ICs, to prevent damage from static electricity.

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FF400R33KF2C Overview

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Part Image FF400R33KF2CNOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel