Part Image

FF450R12KE4 - Infineon

Description: IGBT Modules N-CH 1.2KV 520A

Download FF450R12KE4 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
FF450R12KE4 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

FF450R12KE4 Details

  • Manufacturer Part Number:

    FF450R12KE4

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    7

  • Country Of Origin:

    Austria, Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    520 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X7

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2400 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    800 ns

  • Turn-on Time-Nom (ton):

    325 ns

  • VCEsat-Max:

    2.15 V

FF450R12KE4 Frequently Asked Questions (FAQs)

  • The maximum allowed voltage derating for the FF450R12KE4 is 10% of the maximum rated voltage, which is 1200V. This means the device can operate safely up to 1080V.
  • To ensure proper cooling, the FF450R12KE4 should be mounted on a heat sink with a thermal resistance of less than 0.5 K/W. Additionally, the device should be operated within the recommended temperature range of -40°C to 150°C.
  • The recommended gate resistor value for the FF450R12KE4 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the FF450R12KE4 can be used in parallel, but it requires careful consideration of the device's thermal and electrical characteristics. It is recommended to consult with an Infineon application engineer for specific guidance.
  • The maximum allowed dv/dt for the FF450R12KE4 is 10 kV/μs. Exceeding this value may cause the device to malfunction or fail.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

FF450R12KE4 Overview

Use the download button to access the FF450R12KE4 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FF450, or try a keyword search, such as IGBTs

Parts related to FF450R12KE4

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

FF450R12KE4 Alternates

Showing results

Image Part Number Model
Part Image FF450R12KE4EHOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel

Part Image FF450R12KE4HOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel

Part Image FF450R12KE4_E Infineon Technologies AG

Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel