Part Image

FF450R12ME4_B11 - Infineon

Description: Infineon FF450R12ME4_B11, IGBT Module, Dual, 675 A max, 1200 V, 11-Pin ECONOD

Download FF450R12ME4_B11 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
FF450R12ME4_B11 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

FF450R12ME4_B11 Details

  • Manufacturer Part Number:

    FF450R12ME4_B11

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    675 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X11

  • Number of Elements:

    2

  • Number of Terminals:

    11

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2250 W

  • Reference Standard:

    UL APPROVED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    740 ns

  • Turn-on Time-Nom (ton):

    290 ns

  • VCEsat-Max:

    2.1 V

FF450R12ME4_B11 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the FF450R12ME4_B11 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for the FF450R12ME4_B11. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and maintain a low thermal resistance. Additionally, consider using a fan or other cooling mechanisms to keep the module within the recommended temperature range.
  • The recommended gate resistance for the FF450R12ME4_B11 is between 10 Ω and 20 Ω. This value helps to ensure proper switching performance and minimizes electromagnetic interference (EMI).
  • Yes, the FF450R12ME4_B11 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are designed to handle the increased current and voltage requirements.
  • The recommended dead time for the FF450R12ME4_B11 is typically in the range of 1 μs to 3 μs, depending on the specific application and switching frequency. A longer dead time can help reduce electromagnetic interference (EMI) and minimize the risk of shoot-through currents.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

FF450R12ME4_B11 Overview

Use the download button to access the FF450R12ME4_B11 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FF450, or try a keyword search, such as IGBTs

Parts related to FF450R12ME4_B11

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview