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FF600R12ME4CB11BOSA1 - Infineon

Description: IGBT Module Trench Field Stop 2 Independent 1200 V 1060 A 4050 W Chassis Mount Module

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FF600R12ME4CB11BOSA1 - Infineon  - 3D model
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FF600R12ME4CB11BOSA1 Details

  • Manufacturer Part Number:

    FF600R12ME4CB11BOSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    1060 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X11

  • Number of Elements:

    2

  • Number of Terminals:

    11

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4050 W

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    710 ns

  • Turn-on Time-Nom (ton):

    300 ns

  • VCEsat-Max:

    2.1 V

FF600R12ME4CB11BOSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FF600R12ME4CB11BOSA1 is -40°C to 150°C, with a maximum junction temperature of 150°C.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using a suitable thermal interface material, and maintaining a low thermal resistance between the module and heat sink. Additionally, consider using a heat sink with a high thermal conductivity and a sufficient surface area.
  • The recommended gate resistor value for the FF600R12ME4CB11BOSA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for more detailed guidance.
  • Yes, the FF600R12ME4CB11BOSA1 can be used in a parallel configuration, but it's crucial to ensure that the modules are properly matched, and the gate drive circuits are designed to handle the increased current and voltage requirements. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for the FF600R12ME4CB11BOSA1 is typically in the range of 1.5 to 2 times the maximum rated voltage, depending on the specific application and operating conditions. However, it's essential to consult the datasheet and application notes for more detailed guidance.

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FF600R12ME4CB11BOSA1 Overview

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