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FF600R12ME4EB11BOSA1 - Infineon

Description: IGBT Modules MEDIUM POWER ECONO

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FF600R12ME4EB11BOSA1 - Infineon PCB footprint - Other - Other - FF600R12ME4EB11BOSA1-4
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FF600R12ME4EB11BOSA1 - Infineon  - 3D model - Other - FF600R12ME4EB11BOSA1-4
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FF600R12ME4EB11BOSA1 Details

  • Manufacturer Part Number:

    FF600R12ME4EB11BOSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    MODULE-13

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Case Connection:

    ISOLATED

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.35 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X13

  • Number of Elements:

    2

  • Number of Terminals:

    13

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    700 ns

  • Turn-on Time-Nom (ton):

    340 ns

  • VCEsat-Max:

    2.1 V

FF600R12ME4EB11BOSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the FF600R12ME4EB11BOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking, ensure good thermal contact between the module and heat sink, and maintain a clean and dust-free environment. Additionally, consider using thermal interface materials and thermal pads to improve heat transfer.
  • The recommended gate resistor value for the FF600R12ME4EB11BOSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the FF600R12ME4EB11BOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the FF600R12ME4EB11BOSA1 is specified as 1200 V for a duration of 1 microsecond. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.

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FF600R12ME4EB11BOSA1 Overview

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