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FF650R17IE4 - Infineon

Description: 1700 V, 650 A dual IGBT module

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FF650R17IE4 Details

  • Manufacturer Part Number:

    FF650R17IE4

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    11

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    930 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X7

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1870 ns

  • Turn-on Time-Nom (ton):

    720 ns

  • VCEsat-Max:

    2.45 V

FF650R17IE4 Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 175°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.
  • Infineon recommends a gate drive voltage of 15V to ensure optimal switching performance and minimize power losses. However, the device can operate with a gate drive voltage as low as 10V.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. Infineon recommends using a voltage clamp or a zener diode for OVP, and a current sense resistor or a dedicated OCP IC for OCP.
  • Infineon recommends a dead time of 100-200ns to minimize power losses and ensure reliable operation. However, the optimal dead time may vary depending on the specific application and operating conditions.

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FF650R17IE4 Overview

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