SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
250 A
Drain-source On Resistance-Max:
0.00581 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
112 pF
JESD-30 Code:
R-XUFM-X7
Number of Elements:
1
Number of Terminals:
7
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
500 A
Reference Standard:
UL RECOGNIZED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
Turn-off Time-Max (toff):
167.9 ns
Turn-on Time-Max (ton):
102.8 ns
FF6MR12KM1BOSA1 Frequently Asked Questions (FAQs)
The maximum operating temperature range for the FF6MR12KM1BOSA1 is -40°C to 150°C.
The recommended PCB layout for the FF6MR12KM1BOSA1 involves using a multi-layer PCB with a solid ground plane, placing the device near the center of the board, and using shielding and filtering components to minimize EMI.
To ensure the reliability of the FF6MR12KM1BOSA1 in high-temperature applications, it is recommended to follow the recommended operating conditions, use a heat sink, and implement thermal management techniques such as thermal interface materials and heat sinks.
The key considerations for designing a power supply for the FF6MR12KM1BOSA1 include selecting a suitable voltage regulator, ensuring adequate decoupling, and using a low-ESR capacitor to minimize voltage ripple.
To troubleshoot issues with the FF6MR12KM1BOSA1, it is recommended to check the device's operating conditions, verify the PCB layout and design, and use diagnostic tools such as oscilloscopes and thermal imaging cameras to identify the root cause of the issue.
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FF6MR12KM1BOSA1 Overview
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