SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X5
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
5
Operating Temperature-Max:
175 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
395 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
490 ns
Turn-on Time-Nom (ton):
185 ns
VCEsat-Max:
2.15 V
FF75R12RT4 Frequently Asked Questions (FAQs)
The maximum operating temperature range for the FF75R12RT4 is -40°C to 150°C.
To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a gate driver with a high current capability and a low inductance layout.
The recommended gate resistance for the FF75R12RT4 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
Yes, the FF75R12RT4 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent shoot-through currents.
To minimize EMI, use a low-inductance layout, keep the power loops small, and use shielding or filtering techniques. Additionally, consider using a spread-spectrum clock or a clock frequency with a low harmonic content.
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FF75R12RT4 Overview
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