SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
175 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
5100 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
940 ns
Turn-on Time-Nom (ton):
350 ns
VCEsat-Max:
2.05 V
FF900R12IE4 Frequently Asked Questions (FAQs)
The maximum operating temperature range for the FF900R12IE4 is -40°C to 150°C.
To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a gate driver with a high current capability and a short-circuit protection feature.
The recommended gate resistance for the FF900R12IE4 is between 1 ohm and 10 ohm, depending on the specific application and switching frequency.
Yes, the FF900R12IE4 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.
To minimize EMI, use a layout with a solid ground plane, keep the power loops small, and use shielding or filtering if necessary. Additionally, consider using a gate driver with built-in EMI filtering or a common-mode choke.
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FF900R12IE4 Overview
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