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FGA30T65SHD - onsemi

Description: IGBT Trench Field Stop 650 V 60 A 238 W Through Hole TO-3PN

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FGA30T65SHD Details

  • Manufacturer Part Number:

    FGA30T65SHD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    238 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    67.2 ns

  • Turn-on Time-Max (ton):

    33.4 ns

  • VCEsat-Max:

    2.1 V

FGA30T65SHD Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid copper plane for heat spreading, and keeping the thermal path as short as possible. It's also recommended to use a thermal interface material (TIM) between the device and the heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Additionally, consider using a thermal monitoring system to detect overheating and take corrective action.
  • Critical parameters to monitor during operation include the drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and junction temperature (Tj). Monitoring these parameters helps prevent damage from overvoltage, overcurrent, and overheating.
  • To protect the device from ESD, follow proper handling and storage procedures, use ESD-safe materials and tools, and ensure that the device is properly grounded during assembly and testing. It's also recommended to use ESD protection devices, such as TVS diodes, in the circuit design.
  • The recommended gate drive circuits for the FGA30T65SHD typically involve using a dedicated gate driver IC, such as the FAN5351, which provides a high-current, low-impedance drive signal to the gate. The gate drive circuit should be designed to provide a fast rise time, low overshoot, and minimal ringing.

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FGA30T65SHD Overview

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