Part Image

FGA40N65SMD - onsemi

Description: Fast switching: EOFF =6.5uJ/A ; Positive temperature co-efficient for easy parallel operating; Tightened parameter distribution; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A; High current capability; Maximum junction temperature : TJ =175 °C; RoHS compliant

Download FGA40N65SMD Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FGA40N65SMD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
click to zoom
3D Models
FGA40N65SMD - onsemi  - 3D model - Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
click to zoom
  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FGA40N65SMD
  • Part Number FGA40N65SMD
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor IGBT
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O
  • Released Date Aug 28, 2020
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FGA40N65SMD Details

  • Manufacturer Part Number:

    FGA40N65SMD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, SC-65, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    17 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    349 W

  • Rise Time-Max (tr):

    28 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

FGA40N65SMD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FGA40N65SMD is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 650V.
  • A multi-layer PCB with a solid ground plane and a thermal pad connected to a heat sink is recommended. The thermal pad should be connected to a heat sink with a thermal resistance of less than 1°C/W.
  • Handle the device by the body or use an anti-static wrist strap. Use an ESD-protected workstation and follow proper ESD handling procedures.
  • The maximum current rating for the FGA40N65SMD is 40A.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FGA40N65SMD Overview

Use the download button to access the FGA40N65SMD schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FGA40, or try a keyword search, such as IGBTs

Parts related to FGA40N65SMD

Showing 0 results