Part Image

FGA50N100BNTD2 - onsemi

Description: Obsolete - IGBT, 1000V, NPT Trench

Download FGA50N100BNTD2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FGA50N100BNTD2 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
click to zoom
3D Models
FGA50N100BNTD2 - onsemi  - 3D model - Transistor Outline, Vertical - TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
click to zoom

FGA50N100BNTD2 Details

  • Manufacturer Part Number:

    FGA50N100BNTD2

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    100 ns

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    308 ns

  • Turn-on Time-Nom (ton):

    102 ns

FGA50N100BNTD2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FGA50N100BNTD2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device, and consider using a thermal interface material to improve heat transfer between the device and heat sink.
  • The recommended gate drive voltage for the FGA50N100BNTD2 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FGA50N100BNTD2 can be used in a parallel configuration to increase the overall current handling capability. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the FGA50N100BNTD2 is 10kV/μs. Exceeding this rating can cause the device to fail or malfunction.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FGA50N100BNTD2 Overview

Use the download button to access the FGA50N100BNTD2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FGA50, or try a keyword search, such as IGBTs

Parts related to FGA50N100BNTD2

Showing 0 results