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FGA60N60UFDTU - onsemi

Description: Obsolete - IGBT, 650 V, 30 A Field Stop Trench

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FGA60N60UFDTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGA60N60UFDTU
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3D Models
FGA60N60UFDTU - onsemi  - 3D model - Transistor Outline, Vertical - FGA60N60UFDTU
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FGA60N60UFDTU Details

  • Manufacturer Part Number:

    FGA60N60UFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    80 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    298 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    204 ns

  • Turn-on Time-Nom (ton):

    83 ns

FGA60N60UFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FGA60N60UFDTU is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. A thermal interface material (TIM) can also be used to improve heat transfer.
  • The recommended gate drive voltage for the FGA60N60UFDTU is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can improve switching speed, but may also increase power consumption.
  • To protect the FGA60N60UFDTU from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect and interrupt excessive current.
  • A good PCB layout for the FGA60N60UFDTU should minimize parasitic inductance and capacitance, keep the gate drive traces short and wide, and use a solid ground plane to reduce electromagnetic interference (EMI).

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FGA60N60UFDTU Overview

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