Part Image

FGA60N65SMD - onsemi

Description: High current capability; Positive temperature co-efficient for easy parallel operating; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A; Tightened parameter distribution; Fast switching: EOFF =7.5uJ/A ; RoHS compliant; Maximum junction temperature : TJ =175 °C

Download FGA60N65SMD Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FGA60N65SMD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PN
click to zoom
3D Models
FGA60N65SMD - onsemi  - 3D model - Transistor Outline, Vertical - TO-3PN
click to zoom

FGA60N65SMD Details

  • Manufacturer Part Number:

    FGA60N65SMD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, SC-65, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    68 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Rise Time-Max (tr):

    70 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

FGA60N65SMD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FGA60N65SMD is -55°C to 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via array to dissipate heat efficiently.
  • The recommended gate drive voltage for the FGA60N65SMD is between 10V and 15V, with a maximum gate-source voltage of 20V.
  • To protect the FGA60N65SMD from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The maximum allowable power dissipation for the FGA60N65SMD is 300W, assuming a maximum junction temperature of 150°C.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FGA60N65SMD Overview

Use the download button to access the FGA60N65SMD schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FGA60, or try a keyword search, such as IGBTs

Parts related to FGA60N65SMD

Showing 0 results