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FGB40T65SPD-F085 - onsemi

Description: AEC-Q101 Qualified; Low Saturation Voltage : VCE(sat) = 2.0 V(Typ.) @ IC = 40 A; Maximum Junction Temperature : TJ = 175°C; Tight Parameter Distribution; Positive Temperature Coefficient; 100% of the parts are dynamically tested (Note 1; Short Circuit Ruggedness >5 μs @ 25°C; Fast Switching; Copacked with soft, fast recovery diode; RoHS Compliant

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FGB40T65SPD-F085 - onsemi - PCB symbol
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PCB Footprints
FGB40T65SPD-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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3D Models
FGB40T65SPD-F085 - onsemi - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FGB40T65SPD-F085 Details

  • Manufacturer Part Number:

    FGB40T65SPD-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    51 ns

  • Turn-on Time-Nom (ton):

    49 ns

FGB40T65SPD-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The critical parameters to monitor during operation include drain-source voltage, gate-source voltage, drain current, and junction temperature. These parameters should be monitored to prevent device damage and ensure reliable operation.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode. Overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC.
  • The device should be handled with care to prevent damage from electrostatic discharge. Soldering should be done using a soldering iron with a temperature of 250°C or less, and the device should be soldered within 10 seconds.

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FGB40T65SPD-F085 Overview

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Part Image FGB40T65SPD_F085 onsemi

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-263AB