FGB40 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 AEC-Q101 Qualified; Low Saturation Voltage : VCE(sat) = 2.0 V(Typ.) @ IC = 40 A; Maximum Junction Temperature : TJ = 175°C; Tight Parameter Distribution; Positive Temperature Coefficient; 100% of the parts are dynamically tested (Note 1; Short Circuit Ruggedness >5 μs @ 25°C; Fast Switching; Copacked with soft, fast recovery diode; RoHS Compliant Other FGB40T65SPD-F085 1 Download Model
Part Image Part Image 1 AEC-Q101 qualified; VCE(sat) = 1.6 V (typ.) @ IC = 40 A; Low VF soft recovery co-packaged diode Other AFGB40T65SQDN 1 Download Model
Part Image Part Image 1 AEC Q101 qualified; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient; Low Saturation Voltage; Tightened Parameter Distribution; High Current Capability; Short Circuit rated Other AFGB40T65RQDN 1 Download Model
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FGB40N6S2L99Z Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N6S2L99Z 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N60SM 0 Build or Request
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FGB40N6S2T Rochester Electronics LLC
1 75A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 FGB40N6S2T 0 Build or Request
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FGB40N6S2_NL Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N6S2_NL 0 Build or Request
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FGB40N6S2L86Z Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N6S2L86Z 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-263AB FGB40T65SPD_F085 0 Build or Request
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FGB40N6S2 Rochester Electronics LLC
1 75A, 600V, N-CHANNEL IGBT, TO-263AB, D2PAK-3 FGB40N6S2 0 Build or Request
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FGB40N6S2T Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N6S2T 0 Build or Request
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FGB40N6S2 Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N6S2 0 Build or Request
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FGB40N6S2S62Z Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N6S2S62Z 0 Build or Request
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FGB40N60SM Fairchild Semiconductor Corporation
1 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB FGB40N60SM 0 Build or Request
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MXFFFGB40M001 MERITEK Electronics Corporation
1 Parallel - 3Rd Overtone Quartz Crystal, 40.001MHz Nom MXFFFGB40M001 0 Build or Request
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MXFGFGB40M001 MERITEK Electronics Corporation
1 Parallel - 3Rd Overtone Quartz Crystal, 40.001MHz Nom MXFGFGB40M001 0 Build or Request
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MXFEFGB40M4 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 40.4MHz Nom MXFEFGB40M4 0 Build or Request
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VFTX300-GFGB-40MHZ CTS Valpey Corporation
1 Clipped Sine Output Oscillator, 40MHz Nom VFTX300-GFGB-40MHZ 0 Build or Request
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MX3GFGB40M0 MERITEK Electronics Corporation
1 Quartz Crystal, MX3GFGB40M0 0 Build or Request
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MXFDFGB40M4 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 40.4MHz Nom MXFDFGB40M4 0 Build or Request
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MXFGFGB40M4 MERITEK Electronics Corporation
1 Parallel - Fundamental Quartz Crystal, 40.4MHz Nom MXFGFGB40M4 0 Build or Request
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VFTX300-JFGB-40MHZ CTS Corporation
1 Clipped Sine Output Oscillator, 40MHz Nom VFTX300-JFGB-40MHZ 0 Build or Request
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VFTX300-KFGB-40MHZ CTS Corporation
1 Clipped Sine Output Oscillator, 40MHz Nom VFTX300-KFGB-40MHZ 0 Build or Request
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MXFDFGB40M001 MERITEK Electronics Corporation
1 Parallel - 3Rd Overtone Quartz Crystal, 40.001MHz Nom MXFDFGB40M001 0 Build or Request
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MXFLFGB40M001 MERITEK Electronics Corporation
1 Parallel - 3Rd Overtone Quartz Crystal, 40.001MHz Nom MXFLFGB40M001 0 Build or Request
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