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FGD3040G2-F085C - onsemi

Description: 150W 41A 400V DPAK(TO-252) IGBT Transistors / Modules ROHS , -55°C ~ 175°C (TJ)

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PCB Footprints
FGD3040G2-F085C - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-1
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3D Models
FGD3040G2-F085C - onsemi  - 3D model - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-1
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FGD3040G2-F085C Details

  • Manufacturer Part Number:

    FGD3040G2-F085C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-01-30

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Collector Current-Max (IC):

    41 A

  • Collector-Emitter Voltage-Max:

    450 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    2.2 V

  • Gate-Emitter Voltage-Max:

    10 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    25000 ns

  • Turn-off Time-Nom (toff):

    6800 ns

  • Turn-on Time-Max (ton):

    11000 ns

  • Turn-on Time-Nom (ton):

    2800 ns

  • VCEsat-Max:

    1.25 V

FGD3040G2-F085C Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and a bias circuit to ensure proper operation. A voltage regulator and a bias resistor network can be used to set the gate-source voltage (Vgs) to the recommended value.
  • The maximum allowable power dissipation for the FGD3040G2-F085C is 125W. However, this value can be derated based on the ambient temperature and the device's thermal resistance.
  • Yes, the FGD3040G2-F085C is suitable for high-frequency switching applications up to 1 MHz. However, the device's switching characteristics and parasitic inductances should be considered in the design.
  • A voltage clamp or a transient voltage suppressor (TVS) can be used to protect the device from overvoltage conditions. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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