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FGD3040G2-F085V - onsemi

Description: SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; Qualified to AEC Q101; RoHS Compliant

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FGD3040G2-F085V - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE F_1
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FGD3040G2-F085V - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE F_1
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FGD3040G2-F085V Details

  • Manufacturer Part Number:

    FGD3040G2-F085V

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    41 A

  • Collector-Emitter Voltage-Max:

    390 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    2.2 V

  • Gate-Emitter Voltage-Max:

    10 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30000 ns

  • Turn-off Time-Nom (toff):

    6800 ns

  • Turn-on Time-Max (ton):

    11000 ns

  • Turn-on Time-Nom (ton):

    2800 ns

  • VCEsat-Max:

    1.85 V

FGD3040G2-F085V Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VCC) to operate within the recommended operating conditions. Ensure the input voltage is within the specified range (4.5V to 5.5V) and the bias voltage is set to 1.2V to 1.4V.
  • The maximum allowable power dissipation for the FGD3040G2-F085V is 1.4W. Ensure the device is operated within this limit to prevent overheating and damage.
  • The FGD3040G2-F085V has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.
  • The FGD3040G2-F085V is designed to operate at frequencies up to 1 GHz. However, the optimal operating frequency range depends on the specific application and circuit design. Consult the datasheet and application notes for more information.

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