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FGD3050G2 - onsemi

Description: SCIS Energy = 300mJ at TJ = 25°C; Logic Level Gate Drive; Qualified to AEC Q101; RoHS Compliant

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PCB Footprints
FGD3050G2 - onsemi PCB footprint - Other - Other - FGD3050G2-6
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FGD3050G2 - onsemi  - 3D model - Other - FGD3050G2-6
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FGD3050G2 Details

  • Manufacturer Part Number:

    FGD3050G2

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Philippines, USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    32 A

  • Collector-Emitter Voltage-Max:

    495 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    2.2 V

  • Gate-Emitter Voltage-Max:

    10 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30000 ns

  • Turn-off Time-Nom (toff):

    6800 ns

  • Turn-on Time-Max (ton):

    11000 ns

  • Turn-on Time-Nom (ton):

    2500 ns

  • VCEsat-Max:

    1.2 V

FGD3050G2 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and proper biasing of the gate and source pins. A voltage regulator and decoupling capacitors should be used to ensure a stable supply voltage.
  • The maximum SOA is defined by the voltage and current ratings specified in the datasheet. Operating the device beyond these ratings can lead to reduced reliability or even damage.
  • ESD protection can be achieved by using ESD protection devices, such as TVS diodes, and following proper handling and storage procedures to prevent static electricity buildup.
  • A low-impedance drive circuit with a high-current capability is recommended to ensure fast switching times and minimal power loss. A gate driver IC or a dedicated driver circuit can be used.

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