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FGD5T120SH - onsemi

Description: Trans IGBT Chip N-CH 1200V 10A 69000mW T/R

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FGD5T120SH - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FGD5T120SH - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FGD5T120SH Details

  • Manufacturer Part Number:

    FGD5T120SH

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    4.5 V

  • Gate-Emitter Voltage-Max:

    25 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    GENERAL PURPOSE SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    159.6 ns

  • Turn-on Time-Nom (ton):

    44.8 ns

  • VCEsat-Max:

    3.6 V

FGD5T120SH Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FGD5T120SH is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the heat sink and avoid blocking airflow to the heat sink.
  • The recommended gate drive voltage for the FGD5T120SH is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FGD5T120SH is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is designed to handle the high-frequency switching and that the power losses are properly managed.
  • To protect the FGD5T120SH from overvoltage and overcurrent, use a voltage clamp or a surge protector to limit the voltage across the device. Additionally, use a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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FGD5T120SH Overview

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