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FGH40N60SMD - onsemi

Description: Positive temperaure co-efficient for easy parallel operating; High input impedance; High current capability; Maximum junction temperature : TJ=175°C; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A; Fast switching: EOFF =6.5uJ/A; RoHS compliant; Tightened parameter distribution

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PCB Footprints
FGH40N60SMD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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3D Models
FGH40N60SMD - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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FGH40N60SMD Details

  • Manufacturer Part Number:

    FGH40N60SMD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.25

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    17 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    349 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    28 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    132 ns

  • Turn-on Time-Nom (ton):

    37 ns

FGH40N60SMD Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FGH40N60SMD is a 5x6 mm pad with a 0.5 mm thermal via, as specified in the onsemi application note AND9093/D.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 5°C for every 1,000 feet of altitude above sea level, and to use a suitable thermal interface material to minimize thermal resistance.
  • The recommended gate drive voltage for FGH40N60SMD is between 10V and 15V, with a maximum gate-source voltage of 20V to prevent damage to the device.
  • To protect FGH40N60SMD from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper ESD-handling procedures during assembly and testing.
  • The maximum allowed parasitic inductance for FGH40N60SMD is 5 nH, as specified in the onsemi application note AND9093/D. Exceeding this value may affect the device's switching performance and reliability.

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