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FGH40N60SMDF - onsemi

Description: Fast switching: EOFF =6.5uJ/A; RoHS compliant; Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A; High input impedance; Positive temperaure co-efficient for easy parallel operating; Tightened parameter distribution; Maximum junction temperature : TJ =175 °C; High current capability

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Symbol
FGH40N60SMDF - onsemi - PCB symbol
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PCB Footprints
FGH40N60SMDF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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3D Models
FGH40N60SMDF - onsemi - 3D model - Transistor Outline, Vertical - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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FGH40N60SMDF Details

  • Manufacturer Part Number:

    FGH40N60SMDF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    33 Weeks, 4 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    17 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    349 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    28 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    132 ns

  • Turn-on Time-Nom (ton):

    37 ns

FGH40N60SMDF Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • To ensure reliable operation, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The maximum allowed voltage overshoot is typically 10% to 20% above the maximum rated voltage (600V) for a short duration (e.g., 1-2 microseconds). However, it's recommended to consult with onsemi's application engineers for specific guidance on voltage overshoot tolerance.
  • Yes, FGH40N60SMDF can be used in a half-bridge configuration. However, it's essential to ensure proper dead-time management and gate drive design to prevent shoot-through currents and ensure reliable operation.
  • The recommended PCB layout and clearance for FGH40N60SMDF involve keeping the drain and source pins as close as possible, using a solid ground plane, and maintaining a minimum clearance of 1.5 mm between the device and other components to prevent electrical noise and interference.

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FGH40N60SMDF Overview

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