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FGH40N60UFDTU - onsemi

Description: High input impedance; RoHS compliant; Fast switching: EOFF =12uJ/A ; Low saturation voltage: VCE(sat) =1.8V @ IC = 40A; High current capability

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FGH40N60UFDTU - onsemi PCB footprint - Other - Other - FGH40N60UFDTU-1
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FGH40N60UFDTU - onsemi  - 3D model - Other - FGH40N60UFDTU-1
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FGH40N60UFDTU Details

  • Manufacturer Part Number:

    FGH40N60UFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.25

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    100 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    290 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    190 ns

  • Turn-on Time-Nom (ton):

    110 ns

FGH40N60UFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FGH40N60UFDTU can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FGH40N60UFDTU is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive voltage can damage the device.
  • Yes, the FGH40N60UFDTU is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is designed to minimize switching losses and electromagnetic interference (EMI).
  • To protect the FGH40N60UFDTU from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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