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FGH60N60SFDTU - onsemi

Description: High Current Capability; Low Saturation Voltage : VCE(sat) = 2.3V @ IC = 60 A; High Input Impedance; Fast Switching; RoHS Compliant

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PCB Footprints
FGH60N60SFDTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD
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3D Models
FGH60N60SFDTU - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD
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FGH60N60SFDTU Details

  • Manufacturer Part Number:

    FGH60N60SFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    62 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    378 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    187 ns

  • Turn-on Time-Nom (ton):

    66 ns

FGH60N60SFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FGH60N60SFDTU can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FGH60N60SFDTU is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the FGH60N60SFDTU can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are matched and have identical thermal conditions to prevent uneven current sharing.
  • The recommended dead time for the FGH60N60SFDTU in a half-bridge configuration is typically around 100-200 ns. This ensures that the devices are not simultaneously conducting, which can cause shoot-through currents.

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FGH60N60SFDTU Overview

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