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FGH60N60UFDTU - onsemi

Description: Fast switching: EOFF =14uJ/A ; High current capability; RoHS compliant; Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A; High input impedance

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FGH60N60UFDTU - onsemi - PCB symbol
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PCB Footprints
FGH60N60UFDTU - onsemi PCB footprint - Other - Other - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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3D Models
FGH60N60UFDTU - onsemi - 3D model - Other - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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FGH60N60UFDTU Details

  • Manufacturer Part Number:

    FGH60N60UFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    80 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    298 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    204 ns

  • Turn-on Time-Nom (ton):

    83 ns

FGH60N60UFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FGH60N60UFDTU is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FGH60N60UFDTU is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FGH60N60UFDTU can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the FGH60N60UFDTU in a half-bridge configuration is typically around 100-200 ns. This ensures that the high-side and low-side devices are not conducting simultaneously, preventing shoot-through currents.

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FGH60N60UFDTU Overview

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