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FGH60T65SQD-F155 - onsemi

Description: Maximum Junction Temperature: TJ =175°C; Positive Temperature Co-efficient for Easy Parallel Operating; High Current Capability; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A; 100% of the Parts Tested for ILM(1); High Input Impedance; Fast Switching; Tighten Parameter Distribution; RoHS Compliant

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FGH60T65SQD-F155 - onsemi - PCB symbol
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PCB Footprints
FGH60T65SQD-F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGH60T65SQD-F155-1
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FGH60T65SQD-F155 - onsemi - 3D model - Transistor Outline, Vertical - FGH60T65SQD-F155-1
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FGH60T65SQD-F155 Details

  • Manufacturer Part Number:

    FGH60T65SQD-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    RC-IGBT

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    126.2 ns

  • Turn-on Time-Nom (ton):

    36.8 ns

  • VCEsat-Max:

    2.1 V

FGH60T65SQD-F155 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • Monitor the device's junction temperature (Tj), case temperature (Tc), and power dissipation (PD) to prevent overheating. Ensure that the device operates within the recommended temperature range.
  • Yes, the FGH60T65SQD-F155 is designed for high-reliability applications. However, it's essential to follow the recommended operating conditions, storage, and handling guidelines to ensure the device's reliability.
  • Use proper ESD protection measures during handling, storage, and assembly, such as using ESD-safe materials, wrist straps, and ionizers. Ensure that the device is properly grounded during assembly.

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FGH60T65SQD-F155 Overview

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