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FGHL40T65MQDT - onsemi

Description: Positive temperature co-efficient; Low Vce(sat); Low Eon and Eoff

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FGHL40T65MQDT - onsemi PCB footprint - Other - Other - FGHL40T65MQDT-1
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FGHL40T65MQDT - onsemi  - 3D model - Other - FGHL40T65MQDT-1
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FGHL40T65MQDT Details

  • Manufacturer Part Number:

    FGHL40T65MQDT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    238 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    113 ns

  • Turn-on Time-Nom (ton):

    40 ns

  • VCEsat-Max:

    1.8 V

FGHL40T65MQDT Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal design for the FGHL40T65MQDT can be found in the onsemi application note AND9093/D, which provides guidelines for thermal management, PCB layout, and component selection.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design and layout guidelines, and to consider the device's maximum junction temperature (Tj) rating of 150°C. Additionally, ensure that the device is properly cooled, and consider using a heat sink or thermal interface material if necessary.
  • The recommended gate drive circuits and components for the FGHL40T65MQDT can be found in the onsemi application note AND9093/D. The application note provides guidance on selecting the appropriate gate driver IC, resistors, and capacitors for optimal performance and reliability.
  • To protect the FGHL40T65MQDT from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. The OVP circuit should be designed to clamp the voltage at a level below the device's maximum rated voltage, and the OCP circuit should be designed to limit the current to a level below the device's maximum rated current.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, consider using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design.

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