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FGL60N100BNTDTU - onsemi

Description: Built-in Fast Recovery Diode; High Input Impedance; Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A; High Speed Switching

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FGL60N100BNTDTU - onsemi - PCB symbol
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FGL60N100BNTDTU - onsemi PCB footprint - Other - Other - FGL60N100BNTDTU-3
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FGL60N100BNTDTU - onsemi - 3D model - Other - FGL60N100BNTDTU-3
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FGL60N100BNTDTU Details

  • Manufacturer Part Number:

    FGL60N100BNTDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-264-3

  • Manufacturer Package Code:

    340CA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    760 ns

  • Turn-on Time-Nom (ton):

    460 ns

FGL60N100BNTDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FGL60N100BNTDTU is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins. You can also consider using a thermal interface material to improve heat transfer.
  • The recommended gate drive voltage for the FGL60N100BNTDTU is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FGL60N100BNTDTU can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • To minimize parasitic inductance and ensure proper operation, it's recommended to use a PCB layout with a low-inductance path for the drain and source connections. Additionally, keep the gate drive signal traces short and away from noise sources.

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FGL60N100BNTDTU Overview

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FGL60N100BNTDTU Alternates

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Part Image FGL60N100BNTD Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
Part Image FGL60N100BNTD onsemi

Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA