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FGP3440G2-F085 - onsemi

Description: ON SEMICONDUCTOR - FGP3440G2-F085 - IGBT Single Transistor, 26.9 A, 1.1 V, 166 W, 400 V, TO-220AB, 3 Pins

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FGP3440G2-F085 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
FGP3440G2-F085 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB
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FGP3440G2-F085 Details

  • Manufacturer Part Number:

    FGP3440G2-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3L

  • Manufacturer Package Code:

    340AT

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Collector Current-Max (IC):

    26.9 A

  • Collector-Emitter Voltage-Max:

    390 V

  • Fall Time-Max (tf):

    15000 ns

  • Gate-Emitter Thr Voltage-Max:

    2.2 V

  • Gate-Emitter Voltage-Max:

    12 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    166 W

  • Rise Time-Max (tr):

    7000 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

FGP3440G2-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure proper PCB design, component selection, and assembly to minimize thermal resistance.
  • Monitor the device's junction temperature, drain-source voltage, and current. Implement over-temperature, over-voltage, and over-current protection to prevent damage and ensure reliable operation.
  • Use a dedicated gate driver IC with a high current capability and low output impedance. Ensure a low-inductance layout and minimize the distance between the gate driver and the FGP3440G2-F085.
  • Implement ESD protection diodes on the gate and drain pins. Use a low-capacitance, high-voltage ESD diode array, and ensure a low-inductance connection to the device.

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FGP3440G2-F085 Overview

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Part Image FGP3440G2_F085 onsemi

400V, 25A, 1.30V, 335mJ, TO-220 EcoSPARK® II, N-Channel Ignition IGBT, TO-220 3L, 800-RAIL