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FGY100T65SCDT - onsemi

Description: Maximum Junction Temperature: TJ = 175°C; Positive Temperature Co-efficient for Easy Parallel Operating; High Current Capability; Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A; High Input Impedance; Fast Switching; Short Circuit Rated 5 us; Tighten Parameter Distribution; These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
FGY100T65SCDT - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247+
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3D Models
FGY100T65SCDT - onsemi  - 3D model - Transistor Outline, Vertical - TO-247+
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FGY100T65SCDT Details

  • Manufacturer Part Number:

    FGY100T65SCDT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    FAST SWITCHING

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    200 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.9 V

  • Gate-Emitter Voltage-Max:

    25 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    GENERAL PURPOSE SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    410 ns

  • Turn-on Time-Nom (ton):

    240 ns

  • VCEsat-Max:

    1.9 V

FGY100T65SCDT Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable input voltage (VCC) and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to filter out noise and ensure a stable input voltage.
  • The maximum allowed power dissipation for the FGY100T65SCDT is 100W. However, it's recommended to keep the power dissipation below 80W to ensure reliable operation and to prevent overheating.
  • The device is sensitive to ESD. It's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage.
  • The FGY100T65SCDT is designed to operate at frequencies up to 100 MHz. However, the optimal operating frequency range depends on the specific application and should be determined through characterization and testing.

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FGY100T65SCDT Overview

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