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FGY60T120SQDN - onsemi

Description: Extremely Efficient Trench with Ultra Field Stop Technology; TJmax = 175°C; Soft Fast Reverse Recovery Diode; Optimized for High Speed Switching; These are Pb−Free Devices

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PCB Footprints
FGY60T120SQDN - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247+
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3D Models
FGY60T120SQDN - onsemi  - 3D model - Transistor Outline, Vertical - TO-247+
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FGY60T120SQDN Details

  • Manufacturer Part Number:

    FGY60T120SQDN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2018-12-07

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    HIGH SPEED SWITCHING

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    25 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    517 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    GENERAL PURPOSE SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    468 ns

  • Turn-on Time-Nom (ton):

    112 ns

  • VCEsat-Max:

    1.95 V

FGY60T120SQDN Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FGY60T120SQDN is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device, and consider using a thermal interface material to improve heat transfer between the device and heat sink.
  • The recommended gate drive voltage for the FGY60T120SQDN is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FGY60T120SQDN can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are matched and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the FGY60T120SQDN is 10 kV/μs. Exceeding this rating can cause the device to fail or malfunction.

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