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FGY75N60SMD - onsemi

Description: High current capability; High input impedance; Fast switching: EOFF =10uJ/A; Low saturation voltage: VCE(sat) = 1.9V @ IC = 75A; RoHS compliant

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PCB Footprints
FGY75N60SMD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CE ISSUE O
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3D Models
FGY75N60SMD - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CE ISSUE O
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FGY75N60SMD Details

  • Manufacturer Part Number:

    FGY75N60SMD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CD

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    29 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    73 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    161 ns

  • Turn-on Time-Nom (ton):

    76 ns

FGY75N60SMD Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FGY75N60SMD is a 5.08mm x 3.33mm pad with a 0.5mm thermal via array. This ensures optimal thermal performance and reduces thermal resistance.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 5°C for every 1,000 meters of altitude above sea level. Additionally, ensure proper thermal management and heat sinking to keep the junction temperature below 150°C.
  • The recommended gate drive voltage for FGY75N60SMD is between 10V and 15V. This ensures reliable switching and minimizes the risk of false triggering.
  • To protect FGY75N60SMD from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.
  • The maximum allowed parasitic inductance for FGY75N60SMD is 5nH. Exceeding this value can lead to reduced switching performance and increased electromagnetic interference (EMI).

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FGY75N60SMD Overview

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