Part Image

FGY75T120SQDN - onsemi

Description: Extremely Efficient Trench with Ultra Field Stop Technology; Soft Fast Reverse Recovery Diode; TJmax = 175°C; These are Pb−Free Devices; Optimized for High Speed Switching

Download FGY75T120SQDN Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FGY75T120SQDN - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGY75T120SQDN
click to zoom
3D Models
FGY75T120SQDN - onsemi  - 3D model - Transistor Outline, Vertical - FGY75T120SQDN
click to zoom

FGY75T120SQDN Details

  • Manufacturer Part Number:

    FGY75T120SQDN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CD

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    790 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    452 ns

  • Turn-on Time-Nom (ton):

    136 ns

  • VCEsat-Max:

    1.95 V

FGY75T120SQDN Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, drain-source voltage, and drain current. Implement over-temperature, over-voltage, and over-current protection mechanisms to prevent damage.
  • Use a dedicated gate driver IC with a high current capability and a low output impedance. Ensure a short gate lead length and a low inductance path to minimize switching losses.
  • Implement ESD protection diodes at the input and output pins, and consider adding a TVS (Transient Voltage Suppressor) device for additional protection. Ensure a robust PCB design with a solid ground plane and minimal lead lengths.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FGY75T120SQDN Overview

Use the download button to access the FGY75T120SQDN schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FGY75, or try a keyword search, such as IGBTs

Parts related to FGY75T120SQDN

Showing 0 results