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FGY75T95SQDT - onsemi

Description: Lifetime - 3.3V LVDS 1-Bit High Speed Differential Driver

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FGY75T95SQDT - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGY75T95SQDT
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FGY75T95SQDT - onsemi  - 3D model - Transistor Outline, Vertical - FGY75T95SQDT
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FGY75T95SQDT Details

  • Manufacturer Part Number:

    FGY75T95SQDT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Package Description:

    TO-247-3LD, 3 PIN

  • Manufacturer Package Code:

    340CD

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    RC-IGBT

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    950 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    434 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    198.8 ns

  • Turn-on Time-Nom (ton):

    89.6 ns

  • VCEsat-Max:

    2.11 V

FGY75T95SQDT Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-3 inch square copper pad on the bottom side of the PCB, connected to the drain pin of the FGY75T95SQDT. This helps to dissipate heat efficiently. Additionally, using thermal vias and a thick copper layer can further improve thermal performance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device. It's also crucial to monitor the device's junction temperature and adjust the operating conditions accordingly.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to follow standard ESD protection practices, such as using ESD-safe handling and storage procedures, and incorporating ESD protection devices (e.g., TVS diodes) in the circuit design. Additionally, ensure that the PCB layout and component placement minimize the risk of ESD damage.
  • Yes, the FGY75T95SQDT can be used in switching regulator applications. However, it's essential to ensure that the device is operated within its recommended switching frequency range (typically up to 1 MHz) and that the circuit design takes into account the device's switching characteristics, such as rise and fall times, and gate charge.
  • When selecting a gate driver for the FGY75T95SQDT, consider the device's gate charge requirements, switching frequency, and voltage rating. Choose a gate driver that can provide the necessary current and voltage to ensure reliable switching. Additionally, consider the driver's propagation delay, rise and fall times, and output impedance to ensure optimal performance.

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FGY75T95SQDT Overview

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