Part Image

FJN3302RTA - onsemi

Description: Obsolete - High Voltage Fast Switching NPN Power Transistor

Download FJN3302RTA Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FJN3302RTA - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2024
click to zoom
3D Models
FJN3302RTA - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2024
click to zoom

FJN3302RTA Details

  • Manufacturer Part Number:

    FJN3302RTA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

FJN3302RTA Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8325/D.
  • The FJN3302RTA requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. A voltage regulator or a zener diode can be used to regulate the bias voltage. Additionally, a resistor and capacitor can be used to filter the bias voltage and reduce noise.
  • The maximum power dissipation of the FJN3302RTA is 1.5W. However, the actual power dissipation will depend on the specific application and operating conditions. It's essential to calculate the power dissipation based on the device's voltage and current ratings, as well as the thermal resistance of the package.
  • Yes, the FJN3302RTA can be used in switching applications, but it's essential to ensure that the device is properly biased and that the switching frequency is within the recommended range. The device's switching characteristics, such as rise and fall times, should also be considered.
  • The FJN3302RTA is sensitive to ESD, and proper handling and storage procedures should be followed to prevent damage. Anti-static wrist straps, mats, and packaging can help to prevent ESD damage. Additionally, the device should be handled in a controlled environment with minimal humidity and temperature fluctuations.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FJN3302RTA Overview

Use the download button to access the FJN3302RTA schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FJN33, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to FJN3302RTA

Showing 0 results

FJN3302RTA Alternates

Showing results

Image Part Number Model
Part Image FJN3302RBU Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92