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FJV42MTF - onsemi

Description: Bipolar Transistors - BJT NPN High Voltage Transistor

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FJV42MTF - onsemi - PCB symbol
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PCB Footprints
FJV42MTF - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)-31
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3D Models
FJV42MTF - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)-31
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FJV42MTF Details

  • Manufacturer Part Number:

    FJV42MTF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Package Description:

    PLASTIC PACKAGE-3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

FJV42MTF Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, drain-source voltage, and drain current. Implement over-temperature, over-voltage, and over-current protection mechanisms to prevent damage.
  • Use a dedicated gate driver IC with a high current capability (>1A) and a low output impedance. Ensure a short gate lead length and a low inductance layout to minimize ringing and oscillations.
  • Implement ESD protection diodes (e.g., TVS or Zener diodes) between the drain and source pins. Use a low-capacitance, high-voltage ESD protection device to minimize parasitic capacitance.

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FJV42MTF Overview

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