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FMMT415TD - Diodes Incorporated

Description: Diodes Inc FMMT415TD NPN Bipolar Transistor, 0.5 A, 100 V, 3-Pin SOT-23

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Symbol
FMMT415TD - Diodes Incorporated - PCB symbol
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PCB Footprints
FMMT415TD - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23_12
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3D Models
FMMT415TD - Diodes Incorporated - 3D model - SOT23 (3-Pin) - SOT23_12
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FMMT415TD Details

  • Manufacturer Part Number:

    FMMT415TD

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

FMMT415TD Frequently Asked Questions (FAQs)

  • A good PCB layout for the FMMT415TD should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. A minimum of 2oz copper thickness is recommended. Refer to the Diodes Incorporated application note AN-114 for more details.
  • The FMMT415TD requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free. A decoupling capacitor of 10nF to 100nF should be placed close to the device. Refer to the datasheet for more information on biasing and decoupling.
  • The FMMT415TD has an operating temperature range of -40°C to 125°C. However, the device's performance and reliability may degrade above 85°C. Ensure proper thermal management and heat sinking to maintain a safe operating temperature.
  • The FMMT415TD is optimized for low-frequency applications up to 100 kHz. While it can be used in high-frequency applications, its performance may degrade. For high-frequency applications, consider using a device specifically designed for high-frequency operation.
  • The FMMT415TD has built-in ESD protection, but additional protection measures can be taken. Use a TVS diode or a zener diode to protect against overvoltage. Ensure the device is handled and stored in an ESD-safe environment.

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FMMT415TD Overview

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Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon