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FP15R06W1E3 - Infineon

Description: IGBT Modules N-CH 600V 22A

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FP15R06W1E3 Details

  • Manufacturer Part Number:

    FP15R06W1E3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    23

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Qualification Status:

    Not Qualified

FP15R06W1E3 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • Infineon recommends using a gate driver with a peak current capability of at least 2A and a voltage rating that matches the MOSFET's gate-source voltage. The driver should also have a low output impedance to minimize switching losses.
  • According to Infineon's application note AN2015-05, the maximum allowed voltage overshoot during switching is 20% above the maximum rated drain-source voltage (VDS) for a duration of less than 100 ns.
  • To ensure SOA compliance, the user should limit the drain-source voltage, drain current, and junction temperature within the specified limits. Infineon provides an SOA graph in the datasheet, which can be used to determine the safe operating region.
  • For high-power applications, Infineon recommends using a heat sink with a thermal interface material (TIM) and a forced air cooling system. The heat sink should be designed to minimize thermal resistance and ensure good thermal contact with the MOSFET.

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FP15R06W1E3 Overview

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Part Image FP15R06W1E3B11BOMA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel