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FQB30N06LTM - onsemi

Description: 175°C maximum junction temperature rating; 32A, 60V, RDS(on) = 35mΩ(Max.) @VGS = 10 V, ID = 16A; 100% avalanche tested; Low Crss ( Typ. 50pF); Low gate charge ( Typ. 15nC)

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FQB30N06LTM - onsemi - PCB symbol
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FQB30N06LTM - onsemi PCB footprint - Other - Other - FQB30N06LTM-2
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FQB30N06LTM - onsemi - 3D model - Other - FQB30N06LTM-2
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FQB30N06LTM Details

  • Manufacturer Part Number:

    FQB30N06LTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    350 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    128 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB30N06LTM Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQB30N06LTM is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, consider the thermal resistance of the package (RθJA) and the maximum power dissipation (PD) of the device. Use a heat sink or thermal interface material to reduce the thermal resistance and ensure the junction temperature remains within the recommended range.
  • The recommended gate drive voltage for the FQB30N06LTM is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the FQB30N06LTM is suitable for high-frequency switching applications up to 100 kHz. However, consider the device's switching losses, gate charge, and thermal performance when designing your application.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes from damaging the device. Additionally, consider using a current sense resistor and overcurrent protection circuit to prevent excessive current from flowing through the device.

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FQB30N06LTM Overview

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FQB30N06LTM Alternates

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Part Image FQB30N06LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB