FQP33N10 Model Download Search Results

Showing 6 of 6 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQP33N10 onsemi	1	33A, 100V, RDS(on) = 52mΩ(Max.) @VGS = 10 V, ID = 16.5A; 100% avalanche tested; Low gate charge ( Typ. 38nC); Low Crss ( Typ. 62pF); 175°C maximum junction temperature rating	Transistor Outline, Vertical	FQP33N10	3D model available Symbol and footprint available 3	1 Download Model
	FQP33N10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP33N10	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP33N10-F080 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FQP33N10-F080	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP33N10L-SB82136 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		FQP33N10L-SB82136	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQP33N10LJ69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQP33N10LJ69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP33N10L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP33N10L	3D model not available Symbol and footprint not available 0	0 Build or Request

Can't find what you're looking for? Request this part