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FQP33N10 - onsemi

Description: 33A, 100V, RDS(on) = 52mΩ(Max.) @VGS = 10 V, ID = 16.5A; 100% avalanche tested; Low gate charge ( Typ. 38nC); Low Crss ( Typ. 62pF); 175°C maximum junction temperature rating

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PCB Footprints
FQP33N10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO -220 3 LAED-
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FQP33N10 - onsemi  - 3D model - Transistor Outline, Vertical - TO -220 3 LAED-
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FQP33N10 Details

  • Manufacturer Part Number:

    FQP33N10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    38 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    435 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    127 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP33N10 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP33N10 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against each other, taking into account the thermal limitations.
  • To ensure the FQP33N10 is fully turned on and off, the gate-source voltage (Vgs) should be driven to the recommended levels. For the FQP33N10, a Vgs of 10V is recommended for full enhancement. The gate drive circuit should be designed to provide a fast rise and fall time to minimize switching losses.
  • The maximum allowed Vds for the FQP33N10 is 100V, as specified in the datasheet. Exceeding this voltage can lead to device failure.
  • Thermal management is critical for the FQP33N10. Ensure good heat sinking, use a thermal interface material, and design the PCB to minimize thermal resistance. The maximum junction temperature (Tj) is 150°C, and the device should be operated within a safe temperature range to prevent thermal runaway.
  • The recommended gate resistor value for the FQP33N10 depends on the specific application and gate drive circuit. A typical value is in the range of 10-100 ohms, but it may need to be adjusted based on the specific requirements of the design.

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FQP33N10 Overview

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