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FQB30N06LTM
onsemi
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1 | 175°C maximum junction temperature rating; 32A, 60V, RDS(on) = 35mΩ(Max.) @VGS = 10 V, ID = 16A; 100% avalanche tested; Low Crss ( Typ. 50pF); Low gate charge ( Typ. 15nC) | Other | FQB30N06LTM |
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FQB30N06LTM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB30N06LTM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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