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FQB34N20LTM - onsemi

Description: Low gate charge ( Typ. 55nC); 31A, 200V, RDS(on) = 75mΩ(Max.) @VGS = 10 V, ID = 15.5A; 100% avalanche tested; Low Crss ( Typ. 52pF); Low level gate drive requirement allowing direct operation from logic drivers; RoHS compliant

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FQB34N20LTM - onsemi PCB footprint - Other - Other - FQB34N20LTM-1
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FQB34N20LTM Details

  • Manufacturer Part Number:

    FQB34N20LTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    640 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    67 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.13 W

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    124 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    1100 ns

  • Turn-on Time-Max (ton):

    1150 ns

FQB34N20LTM Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQB34N20LTM is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper biasing, make sure to follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings specified in the datasheet. Additionally, ensure the device is operated within the recommended operating area to prevent overheating and damage.
  • For optimal thermal performance, it's recommended to use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) and a heat sink if necessary. Follow the recommended PCB layout guidelines in the datasheet and application notes for optimal performance.
  • To protect the FQB34N20LTM from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store the device in an anti-static bag or container. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from electrostatic discharge.
  • The recommended gate drive circuits for the FQB34N20LTM include a gate driver IC, such as the FAN5350, or a discrete gate drive circuit using a BJT or MOSFET. Ensure the gate drive circuit is designed to provide a fast rise and fall time, and can handle the required gate-source voltage and current.

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Part Image FQB34N20LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FQB34N20L onsemi

Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB