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FQB47P06TM-AM002 - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 320pF); 175°C maximum junction temperature rating; -47A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -23.5A; Low gate charge ( Typ. 84nC)

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PCB Footprints
FQB47P06TM-AM002 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FQB47P06TM-AM002 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FQB47P06TM-AM002 Details

  • Manufacturer Part Number:

    FQB47P06TM-AM002

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    820 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    420 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    188 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    610 ns

  • Turn-on Time-Max (ton):

    1020 ns

FQB47P06TM-AM002 Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the drain pad and a solid ground plane on the bottom layer is recommended for optimal thermal performance.
  • Ensure the gate-source voltage (Vgs) is within the recommended range (typically 4-10V) and the gate current is limited to prevent over-voltage stress.
  • The maximum allowed case temperature is 150°C, but it's recommended to keep it below 125°C for optimal reliability and performance.
  • Yes, the FQB47P06TM-AM002 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a voltage clamp or a zener diode to limit the voltage across the device, and consider adding a current sense resistor and a fuse to protect against overcurrent conditions.

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FQB47P06TM-AM002 Overview

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Part Image FQB47P06TM_AM002 onsemi

P-Channel QFET® MOSFET -60V, -47A, 26mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL