FQB47 Model Download Search Results
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FQB47P06TM-AM002
onsemi
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1 | 100% avalanche tested; Low Crss ( Typ. 320pF); 175°C maximum junction temperature rating; -47A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -23.5A; Low gate charge ( Typ. 84nC) | Other | FQB47P06TM-AM002 |
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FQB47P06TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB47P06TM |
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FQB47P06
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | FQB47P06 |
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FQB47P06TM_AM002
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | FQB47P06TM_AM002 |
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FQB47P06TM_AM002
onsemi
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1 | P-Channel QFET® MOSFET -60V, -47A, 26mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL | FQB47P06TM_AM002 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_3.jpg"])
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