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FQD10N20CTM - onsemi

Description: 7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A; Low Crss ( Typ. 40.5pF); Low gate charge ( Typ. 20nC); 100% avalanche tested

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FQD10N20CTM - onsemi PCB footprint - Other - Other - FQD10N20CTM
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FQD10N20CTM Details

  • Manufacturer Part Number:

    FQD10N20CTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    7.8 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    31.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD10N20CTM Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQD10N20CTM is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability (>1A) to quickly charge and discharge the gate capacitance.
  • For optimal thermal performance, use a PCB with a thick copper layer (>1 oz) and a thermal relief pattern under the device. Ensure good thermal conduction by applying a thermal interface material (TIM) between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
  • Yes, the FQD10N20CTM can be used in high-frequency switching applications up to several hundred kHz. However, be aware of the device's switching losses, which increase with frequency. Ensure proper gate drive and PCB layout to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective materials and tools. Ground yourself before handling the device. Use an ESD-protected workstation and store the device in an ESD-protective package when not in use.

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Part Image FQD10N20CTM Rochester Electronics LLC

7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3

Part Image FQD10N20CTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA