FQD10 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQD10N20CTM onsemi	1	7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A; Low Crss ( Typ. 40.5pF); Low gate charge ( Typ. 20nC); 100% avalanche tested	Other	FQD10N20CTM	3D model not available Symbol and footprint available 2	1 Download Model
	FQD10N20LTM onsemi	1	100% Avalanche Tested; Low Crss ( Typ. 14pF); 7.6A, 200V, RDS(on) = 360mΩ @VGS = 10 V, ID = 3.8A; Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers; Low Gate Charge (Typ. 13nC)	Other	FQD10N20LTM	3D model available Symbol and footprint available 3	1 Download Model
	FQD10N20 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20TM	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQD10N20LTF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20L onsemi	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20TF_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20TF_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20C onsemi	1	Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20CTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FQD10N20CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20CTM Rochester Electronics LLC	1	7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3		FQD10N20CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD10N20C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20CTF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FQD10N20CTF	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQD10N20CTF Rochester Electronics LLC	1	7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3		FQD10N20CTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD10N20CTF_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FQD10N20CTF_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC9SDCFQD10.000 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC9SDCFQD10.000	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC4UTBFQD10.0 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC4UTBFQD10.0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC9SDHFQD10.0 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC9SDHFQD10.0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC9SDFFQD10.000 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC9SDFFQD10.000	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC9SDHFQD10.000 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC9SDHFQD10.000	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC4UTDFQD10.0 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC4UTDFQD10.0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC9SDEFQD10.0 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC9SDEFQD10.0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FC9SDBFQD10.0 Fox Electronics	1	Parallel - Fundamental Quartz Crystal, 10MHz Nom		FC9SDBFQD10.0	3D model not available Symbol and footprint not available 0	0 Build or Request
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