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FQD13N06LTM - onsemi

Description: Low gate charge ( Typ. 4.8nC); 100% avalanche tested; Low Crss ( Typ. 17pF); 11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A

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PCB Footprints
FQD13N06LTM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-1
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3D Models
FQD13N06LTM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-1
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FQD13N06LTM Details

  • Manufacturer Part Number:

    FQD13N06LTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD13N06LTM Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQD13N06LTM can withstand is 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value for the FQD13N06LTM is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the FQD13N06LTM is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability.
  • To protect the FQD13N06LTM from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that the device is stored in an ESD-safe environment and that all equipment and tools are properly grounded.

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FQD13N06LTM Overview

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Part Image FQD13N06LTF Rochester Electronics LLC

11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FQD13N06LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD13N06LTF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD13N06L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Image BUK92150-55A Nexperia

Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for FQD13N06LTM, check out Findchips.com