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FQD2P40TM - onsemi

Description: RoHS Compliant; Low Crss ( Typ. 6.5pF); -1.56A, -400V, RDS(on) = 6.5Ω(Max.) @VGS = -10 V, ID = -0.78A; 100% avalanche tested; Low gate charge ( Typ. 10nC)

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PCB Footprints
FQD2P40TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FQD2P40TM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FQD2P40TM Details

  • Manufacturer Part Number:

    FQD2P40TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    1.56 A

  • Drain-source On Resistance-Max:

    6.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    6.24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD2P40TM Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage transient on the drain-source pins is 40V. Exceeding this may cause damage to the device. Use a voltage clamp or transient voltage suppressor to protect the device from voltage spikes.
  • Use a shielded enclosure, keep the device away from antennas and other EMI sources, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Also, ensure that the PCB layout is optimized for minimal radiation.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. This ensures fast switching times and minimizes power losses.

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FQD2P40TM Overview

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Part Image FQD2P40TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.56A I(D), 400V, 6.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD2P40TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.56A I(D), 400V, 6.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD2P40 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.56A I(D), 400V, 6.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252