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FQD5N15TM - onsemi

Description: Low Gate Charge (Typ. 5.4 nC); Low Crss (Typ. 7.5 pF); 100% Avalanche Tested; 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A

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PCB Footprints
FQD5N15TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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3D Models
FQD5N15TM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FQD5N15TM Details

  • Manufacturer Part Number:

    FQD5N15TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    17.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD5N15TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQD5N15TM is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 150V.
  • The recommended gate resistor value for the FQD5N15TM is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the FQD5N15TM from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.
  • The maximum allowable current for the FQD5N15TM is 5A, but this value may be derated depending on the operating temperature and other factors.

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FQD5N15TM Overview

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Part Image FQD5N15TM Rochester Electronics LLC

4.3A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FQD5N15TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5N15 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252